Li, J., Chen, Q., Wang, Q., Hao, D., Zhang, X., Chen, X., . . . Chen, Z. (2025). Junction Field-Effect Transistors Based on MoSe2/WSe2 Heterostructures for High-Performance Photodetection. ACS Applied Materials & Interfaces, 17(11), 16970-16977. https://doi.org/10.1021/acsami.4c15167
Chicago-referens (17:e uppl.)Li, Jialiang, et al. "Junction Field-Effect Transistors Based on MoSe2/WSe2 Heterostructures for High-Performance Photodetection." ACS Applied Materials & Interfaces 17, no. 11 (2025): 16970-16977. https://doi.org/10.1021/acsami.4c15167.
MLA-referens (9:e uppl.)Li, Jialiang, et al. "Junction Field-Effect Transistors Based on MoSe2/WSe2 Heterostructures for High-Performance Photodetection." ACS Applied Materials & Interfaces, vol. 17, no. 11, 2025, pp. 16970-16977, https://doi.org/10.1021/acsami.4c15167.
