Constructing Interfacial B–P Bonding Bridge to Promote S‑Scheme Charge Migration within Heteroatom-Doped Carbon Nitride Homojunction for Efficient H2O2 Photosynthesis

Khan, Shahid, Qaiser, Muhammad Adnan, Qureshi, Waqar Ahmad, Xu, Ying, Li, Jinhe, Li, Han, Sun, Lijuan, Haider, Syed Najeeb-uz-Zaman, Zhu, Bicheng, Wang, Lele, Wang, Weikang, Liu, Qinqin

ACS Applied Materials & Interfaces. 17(4):6249-6259

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Titel	Constructing Interfacial B–P Bonding Bridge to Promote S‑Scheme Charge Migration within Heteroatom-Doped Carbon Nitride Homojunction for Efficient H2O2 Photosynthesis
Författarna	Khan, Shahid, Qaiser, Muhammad Adnan, Qureshi, Waqar Ahmad, Xu, Ying, Li, Jinhe, Li, Han, Sun, Lijuan, Haider, Syed Najeeb-uz-Zaman, Zhu, Bicheng, Wang, Lele, Wang, Weikang, Liu, Qinqin
Källa	ACS Applied Materials & Interfaces. 17(4):6249-6259

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