Komarovskih, N. V., Fomina, L. V., & Beznosyuk, S. A. (2015). Physicochemical conditions of GaAs/GaAsxNy/GaN nanochips stability. Chimica Techno Acta, 2(1), 78-87. https://doi.org/10.15826/chimtech.2015.2.1.008
Chicago Style (17th ed.) CitationKomarovskih, N. V., L. V. Fomina, and S. A. Beznosyuk. "Physicochemical Conditions of GaAs/GaAsxNy/GaN Nanochips Stability." Chimica Techno Acta 2, no. 1 (2015): 78-87. https://doi.org/10.15826/chimtech.2015.2.1.008.
MLA (9th ed.) CitationKomarovskih, N. V., et al. "Physicochemical Conditions of GaAs/GaAsxNy/GaN Nanochips Stability." Chimica Techno Acta, vol. 2, no. 1, 2015, pp. 78-87, https://doi.org/10.15826/chimtech.2015.2.1.008.
Warning: These citations may not always be 100% accurate.