Nakaso, T., Matsuda, T., Kawanishi, H., & Kimura, M. (2024). Improvement of Memristive Characteristic of In-Ga-Zn-O Thin-Film Memristor by Conductive Buffer Layers. IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices, 71(10), 6456. https://doi.org/10.1109/TED.2024.3438117
Chicago-referens (17:e uppl.)Nakaso, T., T. Matsuda, H. Kawanishi, och M. Kimura. "Improvement of Memristive Characteristic of In-Ga-Zn-O Thin-Film Memristor by Conductive Buffer Layers." IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices 71, no. 10 (2024): 6456. https://doi.org/10.1109/TED.2024.3438117.
MLA-referens (9:e uppl.)Nakaso, T., et al. "Improvement of Memristive Characteristic of In-Ga-Zn-O Thin-Film Memristor by Conductive Buffer Layers." IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices, vol. 71, no. 10, 2024, p. 6456, https://doi.org/10.1109/TED.2024.3438117.
