APA (7th ed.) Citation

Zhao, Y., Yu, Y., Guo, J., Wang, L., Yang, N., Jiang, J., . . . Liu, M. (2024). D2D Variation Aware DTCO for Novel Vertical a-IGZO-FETs in Large-Scale M3D 2TOC DRAM Bit Cell Evaluation via Statistical Modeling Methodology. 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Simulation of Semiconductor Processes and Devices (SISPAD), 2024 International Conference on, 01-4. https://doi.org/10.1109/SISPAD62626.2024.10733277

Chicago Style (17th ed.) Citation

Zhao, Yue, et al. "D2D Variation Aware DTCO for Novel Vertical A-IGZO-FETs in Large-Scale M3D 2TOC DRAM Bit Cell Evaluation via Statistical Modeling Methodology." 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Simulation of Semiconductor Processes and Devices (SISPAD), 2024 International Conference on 2024: 01-4. https://doi.org/10.1109/SISPAD62626.2024.10733277.

MLA (9th ed.) Citation

Zhao, Yue, et al. "D2D Variation Aware DTCO for Novel Vertical A-IGZO-FETs in Large-Scale M3D 2TOC DRAM Bit Cell Evaluation via Statistical Modeling Methodology." 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Simulation of Semiconductor Processes and Devices (SISPAD), 2024 International Conference on, 2024, pp. 01-4, https://doi.org/10.1109/SISPAD62626.2024.10733277.