Huang, B., Cheng, C., Hsieh, W., Chen, Y., Chen, W., Liu, Y., . . . Liu, C. W. (2024). WNxCy VT Tuning of Split Gate Nanosheet CFETs with Dual Work Function Metals Achieving 0.93 VT Match/Improved 0.24V Noise Margin/Record Gain of 61V/V. 2024 IEEE International Electron Devices Meeting (IEDM), Electron Devices Meeting (IEDM), 2024 IEEE International, 1-4. https://doi.org/10.1109/IEDM50854.2024.10873325
Chicago-referens (17:e uppl.)Huang, Bo-Wei, et al. "WNxCy VT Tuning of Split Gate Nanosheet CFETs with Dual Work Function Metals Achieving 0.93 VT Match/Improved 0.24V Noise Margin/Record Gain of 61V/V." 2024 IEEE International Electron Devices Meeting (IEDM), Electron Devices Meeting (IEDM), 2024 IEEE International 2024: 1-4. https://doi.org/10.1109/IEDM50854.2024.10873325.
MLA-referens (9:e uppl.)Huang, Bo-Wei, et al. "WNxCy VT Tuning of Split Gate Nanosheet CFETs with Dual Work Function Metals Achieving 0.93 VT Match/Improved 0.24V Noise Margin/Record Gain of 61V/V." 2024 IEEE International Electron Devices Meeting (IEDM), Electron Devices Meeting (IEDM), 2024 IEEE International, 2024, pp. 1-4, https://doi.org/10.1109/IEDM50854.2024.10873325.
