APA (7th ed.) Citation

Miyamoto, K., Ishi, D., Hirose, T., Kishimoto, H., Sato, K., Kachi, T., & Katou, H. (2024). Improvement of P-base contact resistance in power MOSFETs and its impact on avalanche capability. 2024 International Symposium on Semiconductor Manufacturing (ISSM), Semiconductor Manufacturing (ISSM), 2024 International Symposium on, 1-4. https://doi.org/10.1109/ISSM64832.2024.10874953

Chicago Style (17th ed.) Citation

Miyamoto, Keisuke, Daichi Ishi, Takayuki Hirose, Hiroyuki Kishimoto, Kazuyuki Sato, Tsuyoshi Kachi, and Hiroaki Katou. "Improvement of P-base Contact Resistance in Power MOSFETs and Its Impact on Avalanche Capability." 2024 International Symposium on Semiconductor Manufacturing (ISSM), Semiconductor Manufacturing (ISSM), 2024 International Symposium on 2024: 1-4. https://doi.org/10.1109/ISSM64832.2024.10874953.

MLA (9th ed.) Citation

Miyamoto, Keisuke, et al. "Improvement of P-base Contact Resistance in Power MOSFETs and Its Impact on Avalanche Capability." 2024 International Symposium on Semiconductor Manufacturing (ISSM), Semiconductor Manufacturing (ISSM), 2024 International Symposium on, 2024, pp. 1-4, https://doi.org/10.1109/ISSM64832.2024.10874953.