Multibit N-Type and P-Type Fe-GAAFETs Using HfO₂/ZrO₂ Superlattice Dielectric and SiGe/Si Superlattice Channel With Record Low Voltage, Large Memory Window, High Speed, and Reliability for High Density 1T NVM Applications - Yao, Y.; Lin, T.; Wei, C.; Huang, K.; Chen, B.; Fang, Y.; Chang, H.; Fu, Y.; Luo, G.; Hou, F.; Wu, Y. (IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices, 2025)