Over 1.3-kV β-Ga₂O₃ Vertical UMOSFET With High Concentration of N-Ion Implantation and Activation Annealing Temperature - Zou, Z.; Zhang, X.; Zeng, C.; Chen, T.; Guo, G.; Li, B.; Li, Z.; Ma, Y.; Zhou, X.; Xu, G.; Long, S.; Zeng, Z.; et al. (IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices, 2025)