Sarlis, N., & Londos, C. (1996). Infrared bands association with multivacancy-oxygen defects in silicon. 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings, Semiconductor Conference, 1996., International, 1, 53-56. https://doi.org/10.1109/SMICND.1996.557304
Chicago-referens (17:e uppl.)Sarlis, N.V, och C.A Londos. "Infrared Bands Association with Multivacancy-oxygen Defects in Silicon." 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings, Semiconductor Conference, 1996., International 1 (1996): 53-56. https://doi.org/10.1109/SMICND.1996.557304.
MLA-referens (9:e uppl.)Sarlis, N.V, och C.A Londos. "Infrared Bands Association with Multivacancy-oxygen Defects in Silicon." 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings, Semiconductor Conference, 1996., International, vol. 1, 1996, pp. 53-56, https://doi.org/10.1109/SMICND.1996.557304.