APA (7th ed.) Citation

Shi, B., Feng, S., He, Q., Zhang, Y., & Bai, K. (2018). Junction Temperature measurement of SiC BJT via the voltage drop of VBC. 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Solid-State and Integrated Circuit Technology (ICSICT), 2018 14th IEEE International Conference on, 1-3. https://doi.org/10.1109/ICSICT.2018.8564990

Chicago Style (17th ed.) Citation

Shi, Bang-Bing, Shi-Wei Feng, Quan-Bo He, Ya-Min Zhang, and Kun Bai. "Junction Temperature Measurement of SiC BJT via the Voltage Drop of VBC." 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Solid-State and Integrated Circuit Technology (ICSICT), 2018 14th IEEE International Conference on 2018: 1-3. https://doi.org/10.1109/ICSICT.2018.8564990.

MLA (9th ed.) Citation

Shi, Bang-Bing, et al. "Junction Temperature Measurement of SiC BJT via the Voltage Drop of VBC." 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Solid-State and Integrated Circuit Technology (ICSICT), 2018 14th IEEE International Conference on, 2018, pp. 1-3, https://doi.org/10.1109/ICSICT.2018.8564990.