APA (7th ed.) Citation

Ciou, F., Lin, Y., Lin, J., Kuo, T., Hsu, J., Chen, P., & Chang, T. (2021). Analysis of Threshold Voltage Instability under Semi-ON Hot Electron Stress in AlGaN/GaN High Electron Mobility Transistor. 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Physical and Failure Analysis of Integrated Circuits (IPFA), 2021 IEEE International Symposium on the, 1-4. https://doi.org/10.1109/IPFA53173.2021.9617394

Chicago Style (17th ed.) Citation

Ciou, Fong-Min, Yu-Shan Lin, Jia-Hong Lin, Ting-Tzu Kuo, Jui-Tse Hsu, Po-Hsun Chen, and Ting-Chang Chang. "Analysis of Threshold Voltage Instability Under Semi-ON Hot Electron Stress in AlGaN/GaN High Electron Mobility Transistor." 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Physical and Failure Analysis of Integrated Circuits (IPFA), 2021 IEEE International Symposium on the 2021: 1-4. https://doi.org/10.1109/IPFA53173.2021.9617394.

MLA (9th ed.) Citation

Ciou, Fong-Min, et al. "Analysis of Threshold Voltage Instability Under Semi-ON Hot Electron Stress in AlGaN/GaN High Electron Mobility Transistor." 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Physical and Failure Analysis of Integrated Circuits (IPFA), 2021 IEEE International Symposium on the, 2021, pp. 1-4, https://doi.org/10.1109/IPFA53173.2021.9617394.