In this article, an improved nonlinear model for gallium nitride high‐electron‐mobility transistors (GaN HEMTs) is proposed. Aiming at the problem of insufficient accuracy of the nonlinear DC model caused by the self‐heating effect and trap effect in the traditional model, this thesis uses the Softplus function to improve the traditional nonlinear DC model and establishes a nonlinear DC model including the self‐heating effect, which is verified by the three GaN HEMT devices of different sizes. The MSE of Ids is less than 2.44 × 10−6. The traditional empirical basis model needs to calculate the partial derivative of the current expression with respect to Vds, which is tedious and complicated. The proposed model can be directly used to fit the Gm. The verification results show that the MSE of the Gm is less than 1.07 × 10−4, which proves the effectiveness of the equation. [ABSTRACT FROM AUTHOR]

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