The pursuit of miniaturized, high-performance electronic devices has intensified research into novel materials with extraordinary properties. While semiconductors lead the way in optoelectronics and energy harvesting, the burgeoning field of spintronics utilizing electron charge and spin promises revolutionary advances in information processing and storage. A critical component of spintronics is identifying materials with half-metallic behavior, characterized by complete spin polarization at the Fermi level. This study explores chromium (Cr)-doped CaTe as a candidate for half-metallic behavior. Using advanced computational techniques, we investigate the impact of Cr doping on the electronic and magnetic properties of CaTe. Our findings reveal that Cr-doped CaTe exhibits significant crystal field splitting and exchange splitting energies, leading to robust magnetic properties and half-metallic behavior across varying doping concentrations. Notably, the Curie temperature of Cr-doped CaTe exceeds room temperature starting from a 14% Cr concentration, highlighting its practical viability for spintronic applications. The results underscore the potential of Cr-doped CaTe for integration into spintronic devices, offering insights into the electronic structure and magnetic interactions essential for developing next-generation spintronic technologies. [ABSTRACT FROM AUTHOR]

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