Silicon, being the fundamental material for modern semiconductor devices, has seen continuous advancements to enhance its electrical and mechanical properties. Strain engineering is a well-established technique for improving the performance of silicon-based devices. In this paper, we propose a simple method for inducing and permanently maintaining strain in silicon through pure physical bending. By subjecting the silicon substrate to a controlled bending process, we demonstrate the generation of strain levels that persist even after the removal of external stress, with a maximum strain value of 0.4%. We present a comprehensive study of the mechanics behind this phenomenon, a full finite element mechanical model, and experimental verification of the bending-induced strain in Si membranes using electron backscatter diffraction measurements. Our findings show the potential of this approach for strain engineering in high-performance silicon-based technologies without resorting to complex and expensive fabrication techniques. [ABSTRACT FROM AUTHOR]

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