Shen, Z., Zhang, C., Meng, Y., & Wang, Z. (2022). Highly Tunable, Broadband, and Negative Photoresponse MoS2 Photodetector Driven by Ion-Gel Gate Dielectrics. ACS Applied Materials & Interfaces, 14(28), 32412-32419. https://doi.org/10.1021/acsami.2c08341
Chicago-referens (17:e uppl.)Shen, Zhenzhen, Chunchi Zhang, Yajing Meng, och Zegao Wang. "Highly Tunable, Broadband, and Negative Photoresponse MoS2 Photodetector Driven by Ion-Gel Gate Dielectrics." ACS Applied Materials & Interfaces 14, no. 28 (2022): 32412-32419. https://doi.org/10.1021/acsami.2c08341.
MLA-referens (9:e uppl.)Shen, Zhenzhen, et al. "Highly Tunable, Broadband, and Negative Photoresponse MoS2 Photodetector Driven by Ion-Gel Gate Dielectrics." ACS Applied Materials & Interfaces, vol. 14, no. 28, 2022, pp. 32412-32419, https://doi.org/10.1021/acsami.2c08341.