We measure the voltage or electric field (EF) modulated change in anisotropy using two methods on the same nanometer sized device: 1) Directly using the area of the hard axis magnetization loop and 2) Indirectly using the switching field distribution method. Both methods yield similar values of efficiency. With the indirect method, the efficiency derived from the thermal stability was found to be more consistent than that from the anisotropy field. Our data also suggests that memory devices that rely solely on EF effects may benefit from larger device sizes.