Al diffusion, ꞵ-Ga2O3, Enhancement-mode MOSFETs, Gate field plate, MOCVD, Oxygen vacancies, Materials of engineering and construction. Mechanics of materials, TA401-492, Industrial electrochemistry, TP250-261

β-Ga2O3 is regarded as a promising candidate for next-generation high-power devices; however, the impact of material quality on device performance is significant and not yet well understood. In this study, β-Ga2O3 heteroepilayers were grown on c-plane sapphire using metalorganic chemical vapor deposition (MOCVD) at three different O2 flow rates. Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were then fabricated with a gate-recessed process, incorporating a 5 µm gate field plate structure. Higher O2 flow rates resulted in increased breakdown voltage. X-ray photoelectron spectroscopy analysis suggests that this improvement is due to reduced oxygen vacancies and minimized Al diffusion from the substrate. First-principle simulations further confirmed this phenomenon.