Gallium Nitride (GaN), isolated dc-dc, multi-objective design, step-up dc-dc converter, wide bandgap (WBG), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

The integration of Wide Bandgap (WBG) semiconductors has enhanced the performance of switching power supplies in terms of both efficiency and power density. However, the fast-switching dynamics of these devices, particularly in Gallium Nitride (GaN) semiconductors, amplify the impact of parasitic elements in the circuit, demanding new methods and tools in power converter design. To address this problem, a multi-objective design method for a GaN-based isolated DC-DC converter is presented, complemented by an analytical Double Pulse Test (DPT) model. This method is applied to select the optimal components and switching frequency for a push-pull converter, resulting in the design of a GaN-based step-up DC-DC converter. The analytical estimations for power losses and overvoltage are validated through a GaN-based push-pull prototype. The design achieves an efficiency of 93% under nominal conditions, with a power density of 2.23 W/cm3, and a total component cost of 17.5 € for the magnetics, capacitors, and semiconductors. This approach not only demonstrates significant improvement in terms of efficiency, volume, and cost compared to silicon-based isolated DC-DC converters but also offers a promising design methodology to improve isolated DC-DC converters in modern power conversion applications.