Organic field-effect transistors, conjugated polymer, breakdown voltage (BV), H-bridge circuit, current density, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

The long-term absence of organic drive management circuits has prevented organic integration from achieving full flexibility. The high off-state breakdown performance and its avalanche-like breakdown mechanism of copolymer Organic Semiconductor (OSC)-based Organic Field Effect Transistors (OFETs) have been revealed in recent researches. By employing diketopyrrolopyrrole-based conjugated copolymer OSC(DPPT-TT) as the semiconductor layer and Polymethyl methacrylate(PMMA) as the dielectric/passivation layer, the H-bridge circuit can be fabricated with four OFETs integrated on the same Corning glass substrate. The non-destructive avalanche-like breakdown mechanism provides the power OFET a 300 V high BV(Breakdown Voltage), whose critical electric field excesses 5 MV/cm. The fabricated devices also demonstrated the high current density more than 121 A/cm2 and field-effect mobility up to 0.22 cm2/( $\text{V}\cdot \text{s}$ ). The top-gate bottom-contact structure allows the fabricated OFETs a high on-state current density and good device stability without using package construction or other special isolation techniques. By connecting resistors and LEDs on the load side of the H-bridge circuit made of $63~\mu \text{m}$ channel devices, measurement results show that it has good driving effects and driving performance. These measured results show that organic power devices are a potential candidate for application in the power realm.