APA (7th ed.) Citation

Yamashita, Y., Watanabe, Y., Murakawa, K., & Yamagishi, T. (2024). Evaluation of Trap Parameters of RC-IGBT After Repetitive Avalanche Stress by DLTS Simulation. 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on, 52-55. https://doi.org/10.1109/ISPSD59661.2024.10579590

Chicago Style (17th ed.) Citation

Yamashita, Yusuke, Yukihiko Watanabe, Koichi Murakawa, and Tetsuto Yamagishi. "Evaluation of Trap Parameters of RC-IGBT After Repetitive Avalanche Stress by DLTS Simulation." 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on 2024: 52-55. https://doi.org/10.1109/ISPSD59661.2024.10579590.

MLA (9th ed.) Citation

Yamashita, Yusuke, et al. "Evaluation of Trap Parameters of RC-IGBT After Repetitive Avalanche Stress by DLTS Simulation." 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on, 2024, pp. 52-55, https://doi.org/10.1109/ISPSD59661.2024.10579590.