Yamashita, Y., Watanabe, Y., Murakawa, K., & Yamagishi, T. (2024). Evaluation of Trap Parameters of RC-IGBT After Repetitive Avalanche Stress by DLTS Simulation. 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on, 52-55. https://doi.org/10.1109/ISPSD59661.2024.10579590
Chicago-referens (17:e uppl.)Yamashita, Yusuke, Yukihiko Watanabe, Koichi Murakawa, och Tetsuto Yamagishi. "Evaluation of Trap Parameters of RC-IGBT After Repetitive Avalanche Stress by DLTS Simulation." 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on 2024: 52-55. https://doi.org/10.1109/ISPSD59661.2024.10579590.
MLA-referens (9:e uppl.)Yamashita, Yusuke, et al. "Evaluation of Trap Parameters of RC-IGBT After Repetitive Avalanche Stress by DLTS Simulation." 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on, 2024, pp. 52-55, https://doi.org/10.1109/ISPSD59661.2024.10579590.
