Beståndsuppgifter: Multibit N-Type and P-Type Fe-GAAFETs Using HfO₂/ZrO₂ Superlattice Dielectric and SiGe/Si Superlattice Channel With Record Low Voltage, Large Memory Window, High Speed, and Reliability for High Density 1T NVM Applications

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IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 72(4):1569-1573 Apr, 2025

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IEEE Xplore Digital Library