APA (7th ed.) Citation

Yu, S., Zhang, Y., Yang, P., Luo, X., Sun, Z., Liu, H., & Liu, S. (2024). Inhibiting the imprint effect of the TiN/HZO/TiN ferroelectric capacitor by introducing a protective HfO2 layer. AIP Advances, 14(8), . https://doi.org/10.1063/5.0222725

Chicago Style (17th ed.) Citation

Yu, Shihao, Yefan Zhang, Peng Yang, Xiaopeng Luo, Zhenyuan Sun, Haijun Liu, and Sen Liu. "Inhibiting the Imprint Effect of the TiN/HZO/TiN Ferroelectric Capacitor by Introducing a Protective HfO2 Layer." AIP Advances 14, no. 8 (2024). https://doi.org/10.1063/5.0222725.

MLA (9th ed.) Citation

Yu, Shihao, et al. "Inhibiting the Imprint Effect of the TiN/HZO/TiN Ferroelectric Capacitor by Introducing a Protective HfO2 Layer." AIP Advances, vol. 14, no. 8, 2024, https://doi.org/10.1063/5.0222725.